Infineon IR2110PBF Dual High and Low Side MOSFET IGBT Gate Driver IC 14 Pin DIP

The Infineon IR2110PBF is a high-performance dual channel gate driver IC designed to efficiently drive both high-side and low-side power MOSFETs and IGBTs in half-bridge configurations. Housed in a through-hole 14-pin DIP package, this robust Power MOSFET IGBT driver IC supports a wide supply voltage range and high voltage bootstrap operation, making it ideal for industrial power electronics and motor control applications. Features: Dual independent high-side and low-side drivers in one IC. Supports high-voltage bootstrap operation up to ~500 V. Wide logic supply range: 3.3 V to 20 V. Delivers up to ~2 – 2.5 A peak source/sink currents for fast switching. CMOS Schmitt-triggered inputs with pull-down resistors. Undervoltage lockout for both channels. dV/dt immunity for robust performance in noisy environments. Specifications: Number of Pins: 14-Pin DIP Supply Voltage: 3.3 V – 20 V Peak Output Current: Up to ~2.5 A source/sink High Voltage Operation Up to ~500 V bootstrap Logic Input Type CMOS Schmitt-trigger Operating Temp. –40 °C to 125 °C Mounting Type Through Hole Driver Configuration High & Low Side (Half-Bridge) Applications: Motor drive and industrial automation systems. Power supply switching and UPS systems. Robotics power electronics. Solar inverters and energy conversion circuits. Battery management and DC-DC converters. Package Includes: 1× Infineon IR2110PBF Gate Driver IC Dual (14-Pin DIP)