The IRFP260N MOSFET IC is a high-performance, N-channel power MOSFET designed for fast switching, low power loss, and high current handling. With a drain-source voltage rating of 200V and the ability to handle up to 50A of continuous current, this device is ideal for DC-DC converters, power inverters, motor drivers, and high-efficiency power control systems. Manufactured using advanced HEXFET® technology, the IRFP260N offers low R<sub>DS(on)</sub>, fast switching times, and excellent thermal performance. Its robust TO-247 / DIP-3 package makes it suitable for both hobbyist and industrial applications, especially where efficient power switching is critical. Features: N-Channel enhancement mode power MOSFET Advanced HEXFET® technology for high efficiency High-speed switching capability Low R<sub>DS(on)</sub> for reduced conduction losses High current handling up to 50A High voltage tolerance up to 200V Suitable for switching and power control applications TO-247 (DIP-3) package with excellent thermal dissipation Easy to mount on heatsinks for high-power operation Ideal for use in DC-DC converters, inverters, and motor drivers Specifications: Part Number: IRFP260N N-channel power MOSFET Make: Infineon Technologies MOSFET Type: N-Channel Drain-Source Voltage (Vds): 200V Continuous Drain Current (Id): 50A Pulsed Drain Current: 200A Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V Rds(on) (Max): 0.04Ω Total Gate Charge (Qg): 170nC (typical) Power Dissipation (Pd): 280W Package Type: TO-247 / DIP-3 (Through Hole) Mounting Style: Heatsink-compatible Operating Temperature: -55°C to 175°C Applications: MOSFET for DC-DC converters and SMPS Inverter circuits and UPS systems BLDC motor controllers and robotics Battery chargers and solar charge controllers Welding machines and inductive load switching High-power hobby electronics and industrial automation Package Includes: 1 x IRFP260N MOSFET IC 200V 50A DIP-3 Package Useful Link: IRFP260N MOSFET Datasheet
